Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition
نویسندگان
چکیده
منابع مشابه
Pulsed Metalorganic Chemical Vapor Deposition of High Quality AlN/GaN Superlattices for Intersubband Transitions
A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AlN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AlN/GaN SL designed for intersubband transition at a telecommunication wavelength of ~1.5 μm, is grown...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2005
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1850188